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Nexperia GANB4R8-040CBA Bi-Directional GaN FET

Nexperia GANB4R8-040CBA Bi-Directional GaN FET is a 40V, 4.8mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT). The GANB4R8-040CBA is a normally-off emode FET providing superior performance. The Nexperia GANB4R8-040CBA is available in a Wafer-Level Chip Scale (WLCSP) package.

Features

  • Enhancement mode - normally-off power switch
  • Bi-directional device
  • Ultra-high switching speed capability
  • Ultra-low on-state resistance
  • RoHS, Pb-free, REACH-compliant
  • High efficiency and high power density
  • Wafer Level Chip-Scale Package (WLCSP) 2.1mm x 2.1mm

Applications

  • High-side load switch
  • OVP protection in smartphone USB port
  • Power switch circuits
  • Stand-by power system
Application Circuit Diagram - Nexperia GANB4R8-040CBA Bi-Directional GaN FET
Published: 2024-06-04 | Updated: 2024-10-01