Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
The GANB1R2-040QBA is offered in a Very-Thin-Profile Quad Flat No-Lead (VQFN) package. The GANB1R2-040QBA is a normally-off e-mode device delivering superior performance and very low on-state resistance.
The Nexperia GANB012-040CBA is available in a Wafer-Level Chip Scale (WLCSP) package. The GANB012-040CBA is a normally-off e-mode device that provides superior performance.
Features
- Enhancement mode - normally-off power switch
- Bi-directional device
- Ultra-high switching speed capability
- Ultra-low on-state resistance
- RoHS, Pb-free, REACH-compliant
- High efficiency and high power density
- Wafer-Level-Chip-Scale Package (WLCSP) 1.2mm x 1.7mm (GANB012-040CBA)
- Very-Thin-Profile Quad Flat no-lead package (VQFN) 4.0mm x 6.0mm (GANB1R2-040QBA)
Applications
- High-side load switch
- OVP protection in the smartphone USB port
- Power switch circuits
- Standby power system
Datasheets
GANB012-040CBA Pinning
GANB1R2-040QBA Pinning
Published: 2025-06-25
| Updated: 2025-07-14