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Nexperia BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs

Nexperia BUK7Y1R0-40N and BUK7Y3R1-80M N-Channel MOSFETs are designed and qualified to meet AEC-Q101 requirements, delivering high performance and endurance. These MOSFETs offer fast and efficient switching with optimal damping and low spiking. The BUK7Y1R0-40N and BUK7Y3R1-80M N-channel MOSFETs are encapsulated within LFPAK56 packages. The BUK7Y1R0-40N N-channel MOSFET utilizes the Trench 15 low-ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, while the BUK7Y3R1-80M employs the Trench 14 low-ohmic split-gate technology. These N-channel MOSFETs are EU RoHS-compliant and feature a 175°C maximum junction temperature range. Typical applications include motors, lighting, and solenoid control, 12V automotive systems, and ultra-high-performance power switching.

Features

  • Fully automotive qualified to AEC-Q101 (175°C rating suitable for thermally demanding environments)
  • LFPAK gull-wing leads:
    • High board-level reliability absorbing mechanical stress during thermal cycling
    • Visual (AOI) soldering inspection
  • LFPAK copper clip technology:
    • Improved reliability, with reduced Rth, RDSon, and package inductance
    • Increases maximum current capability
    • Improved current spreading
  • EU RoHS-compliant

Applications

  • 12V automotive systems
  • Motor, lighting, and solenoid control
  • Ultra high-performance power switching

Package Outline

Mechanical Drawing - Nexperia BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs
View Results ( 2 ) Page
Part Number Datasheet Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Pd - Power Dissipation Configuration Transistor Type Fall Time Rise Time Typical Turn-Off Delay Time Typical Turn-On Delay Time
BUK7Y1R0-40NX BUK7Y1R0-40NX Datasheet SMD/SMT Power-SO8-4 1 Channel 40 V 320 A 970 uOhms - 20 V, 20 V 3.6 V 135 nC 268 W Single Enhanced-Trench Bottom Oxide (e-TBO) MOSFET 58 ns 49 ns 79 ns 25 ns
BUK7Y3R1-80MX BUK7Y3R1-80MX Datasheet SMD/SMT Power-SO8-4 1 Channel 80 V 160 A 3.1 mOhms - 20 V, 20 V 4 V 70 nC 254 W Single Trench 14 Low Ohmic Split-Gate MOSFET 22 ns 19 ns 38 ns 20 ns
Published: 2024-02-14 | Updated: 2024-02-29