Infineon Technologies IG1NT052N10R Rad-Hard GaN Transistors
Infineon Technologies IG1NT052N10R Rad-Hard GaN Transistors are radiation-hardened Gallium Nitride (GaN) transistors designed for harsh space applications. This Infineon GaN transistor series provides leading performance and reliability in demanding environments. The IG1NT052N10R is a COTS-screened (100kRad) device rated at 100V and 52A and featuring 6.0mΩ RDS(on).
Features
- Up to 70MeV.cm2/mg (Au ion) LET (GAN) single event effect (SEE) hardened
- 100kRad(Si) total ionizing dose (TID)
- Ultra-low RDS(on)
- Low total gate charge
- Zero reverse recovery charge
- COTS screening level
- Hermetically sealed ceramic package
- Surface mount
- Lightweight
- Class 1C per MIL-STD-750, Method 1020 ESD rating
Applications
- Isolated DC-DC converters
- Point-of-load (PoL) converters for FPGA, ASIC, and DSP core rails
- Synchronous rectification
- Motor drives
Specifications
- 100V maximum rated voltage
- 52A rated input current
- 6.0mΩ maximum RDS(on)
- 13nC maximum QG
- 7.1mm x 5.3mm dimensions
- MIL-PRF-19500/794 REF
Published: 2025-05-30
| Updated: 2025-06-02