Back to Infineon Technologies

Infineon Technologies CoolGaN™ Automotive 100V G1 Transistors

Infineon Technologies CoolGaN™ Automotive 100V G1 Transistors meet AEC-Q101 qualifications and offer higher energy efficiency in a smaller form factor than silicon-based components. Infineon CoolGaN Automotive 100V G1 Transistors include the IGC033S10S1Q in a 3mm x 5mm PQFN package and the IGB110S10S1Q in a 3mm x 3mm PQFN. The IGC033S10S1Q features an RDS(on) of 3.3mΩ, and the IGB110S10S1Q has an RDS(on) of 11mΩ. These GaN e-mode power transistors feature dual-side cooling, no reverse recovery charge, and ultra-low figures of merit. Applications include advanced driver assistance systems, climate control, and infotainment systems.

Features

  • AEC-Q101 qualified
  • Size and package type
    • 3mm x 3mm PQFN (IGB110S10S1Q)
    • 3mm x 5mm PQFN (IGC033S10S1Q)
  • RDS(on)
    • 3.3mΩ (IGC033S10S1Q)
    • 11mΩ (IGB110S10S1Q)
  • 100V drain-source voltage
  • Dual-side cooling
  • No reverse recovery charge
  • Ultra-low figures of merit

Applications

  • Automotive
    • Advanced driver assistance systems
    • Climate control
    • Infotainment systems

Datasheets

Schematics

Schematic - Infineon Technologies CoolGaN™ Automotive 100V G1 Transistors
Published: 2025-10-17 | Updated: 2025-10-20