Infineon Technologies CoolGaN™ G5 Transistors with Schottky Diode

Infineon Technologies CoolGaN™ G5 Transistors with a Schottky Diode offer an integrated solution that increases the performance of power systems by reducing undesired deadtime losses, further boosting overall system efficiency. These gallium nitride (GaN) power transistors help simplify the power stage design and lower BOM costs. In hard-switching applications, GaN-based topologies may experience higher power losses because of the larger effective body diode voltage (V SD) of GaN devices. This worsens with long controller deadtimes, leading to lower efficiency than targeted. Typically, deadtime is reduced via controllers or an external Schottky diode in parallel with the GaN transistor is needed, requiring extra effort, time, and cost. Infineon Technologies CoolGaN G5 Transistors with Schottky Diode are designed to greatly mitigate these challenges in industrial applications.