Infineon Technologies 1200V ID-PAK CoolSiC™ TSJ MOSFETs
Infineon Technologies 1200V ID-PAK CoolSiC™ TSJ MOSFETs feature trench-based SiC superjunction (TSJ) technology in a 1200VIN ID-PAK package. Infineon 1200V ID-PAK TSJ MOSFETs offer increased power density with up to 40% improvement in RDS(on). This increased power allows for more compact designs within a given power class. These MOSFETs also enable up to 25% higher current capability in main inverters without compromising short-circuit capability. The TSJ MOSFETs provide enhanced overall system performance, delivering improved energy efficiency, reduced cooling requirements, and higher reliability for demanding automotive and industrial applications.
Features
- 1200VIN voltage rating
- TSJ technology combines the advantages of trench technology and superjunction design
- Up to 25% higher current capability in main inverters without compromising short-circuit capability
- Up to 40% improvement in RDS(on)
- Enhanced overall system performance, delivering improved energy efficiency, reduced cooling requirements, and higher reliability in applications
Applications
- Automotive
- Industrial
Published: 2025-05-07
| Updated: 2025-05-07