iDEAL Semiconductor SuperQ™ Technology
iDEAL Semi SuperQ™ Technology redefines the fundamental structure of the power MOSFET at the atomic level, designing a breakthrough architecture that furnishes a benchmark in efficiency, resistance, and cost x performance. SuperQ expands silicon utilization from 50% up to 95% and delivers superior Rsp and switching losses, while operating in a simple, CMOS-like flow. The SuperQ technology is ideal for high-frequency structures and facilitates a lower junction temperature and smaller heatsinks.
Asymmetrical Charge-Balanced Trench
Legacy power device architectures have practical limits that bound the N-conduction region to 50% of the overall structure. The remaining 50% is used for voltage blocking and does not support conduction. iDEAL has developed a charge-balancing method that can be as thin as 5% of the total structure, allowing for more room for conduction and driving efficiency to be higher.
Thinner Epitaxy
SuperQ delivers a near-ideal charge balance, allowing for thinner epitaxy and improved Figures of Merit.
Higher Doping Concentration
SuperQ’s technology provides a higher doping concentration in the conduction region due to its blocking efficiency. The advanced doping further decreases the resistance of the channel and lowers power loss.
Features
- Better Figures of Merit - delivers low resistance in a single package
- Reduced switching loss - optimized for hard switching within minimal I*V overlap
- Low stored energy - stores less energy, allowing designers to limit switching losses
- Ruggedness and robustness - designed for wide SOA and are 100% UIS tested in production
- Optimized cost x performance - utilizes simpler manufacturing flows
- Built for mass production - built in silicon, just like 95% of semiconductors
Applications
- Data centers
- USB PD fast charging
- Motor drive
- Electric vehicles
- Renewable power arrays
- Electric bikes
- Medical systems
- Home appliances
Battery Management
• SuperQ can withstand 40% higher peak short-circuits than the next best 150V device
• Tested to failure at 800A, far exceeding the 580A failure point of the next-best alternative
• Delivers an industry-leading 2.5mΩRDS(on) (150V) without sacrificing robustness
• Higher current handling allows for up to 50% fewer MOSFETs in parallel, reducing total solution cost
• Built with a mesa width 2x the size of the competition, SuperQ is robust by design
• Designed for strong avalanche capability and fully UIS tested in production
Why SuperQ for Battery Management?
• Increased short circuit protection – withstand greater short circuit currents without damage to sensitive circuitry
• Ruggedness and robustness - devices are designed for high SCWC and are 100% UIS tested in production
• Performance without compromise – achieve lower resistance and high short-circuit handling
BLDC Motor Drives
• SuperQ cuts switching losses by more than 2x compared to leading alternatives
• With a maximum on-resistance of just 6.1mΩ at 200V in a TOLL package, SuperQ delivers the low resistance
• SuperQ utilizes 75% of the die area for conduction, delivering higher current densities and better robustness
• Rated up to 144A, SuperQ handles more load than comparable 200V TOLL MOSFETs
• Narrow gate threshold spread of +0.7V optimizes for parallel MOSFETs
• SuperQ MOSFETs are designed for wide SOA, better linear performance, and overall ruggedness
Why SuperQ for Motor Drives?
• Lower system power loss - longer runtime per charge
• Ruggedness and robustness - devices are designed for wide SOA and are 100% UIS tested in production
• Mature silicon supply chain - easier scaling and sourcing
Fast Charging
• Doubles silicon utilization (from ~50% to 95%)
• Achieves record-low resistance per unit area and switching losses
• Operates with significantly cooler junction temps
• Enables fast switching for high-frequency, compact chargers
• Uses a CMOS-compatible, cost x performance optimized process optimized for modern consumer devices
Why SuperQ for Fast Charging?
• Increased power delivery - faster charging times
• Improved power density - more compact chargers, TVs, and consumer devices
• Mature silicon supply chain - easier scaling and sourcing
Data Center
• Industry-best resistance per unit area
• Dramatically improved conduction and switching losses
• A step change in silicon performance — without the cost of switching to wide bandgap
Why SuperQ for Data Centers?
• Lower PSU power losses - reduced operational expenses
• Better thermal properties - improved power density
• Mature silicon supply chain - lower cost, easier sourcing
Asymmetrical, Charge-Balanced Structure
Associated MOSFETs
iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs
Designed to deliver superior efficiency and switching performance in demanding power applications.
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs
Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.