iDEAL Semiconductor iS15M2R5S1T SuperQ™ 150V N-Channel Power MOSFET
iDEAL Semiconductor iS15M2R5S1T SuperQ™ 150V N-Channel Power MOSFET delivers ultra-low conduction and switching losses in a robust TOLL package. This power MOSFET minimizes heat dissipation at both full and partial loads and features high Short-Circuit Withstand Capability (SCWC). The iS15M2R5S1T power MOSFET offers low switching losses, switching charge (QSW), and capacitive stored energy (EOSS). This power MOSFET is fully UIS‑tested and is RoHS compliant. The iS15M2R5S1T power MOSFET is ideal for use in motor control, battery disconnect switch, and switch-mode power on the primary and secondary.
Features
- Industry-leading RDS(on) in TOLL package
- High Short-Circuit Withstand Capability (SCWC)
- 100% UIS tested in production
- Low switching losses, QSW, and EOSS
- 175°C temperature rating
Applications
- Motor control
- Battery disconnect switch
- Switch mode power on the primary and secondary
Specifications
- 150V (VDS) drain to source voltage
- 2.5mΩ RDS(on) drain to source on-resistance (maximum)
- 233A (ID) continuous drain current
- 123nC (QG) gate charge
- 8.9nC (QSW) switching charge
- 2.6μJ (EOSS) capacitive stored energy
Dimensional Diagram
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