GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes
GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with robustness and thermal conductivity. The 650V diodes feature superior system ruggedness, zero recovery losses, and smaller heat sink requirements. These diodes enable extremely fast switching, reduced cooling requirements, zero reverse recovery current, and increased system power density. GeneSiC Semiconductor 650V SiC Schottky MPS Diodes are ideal for ease of paralleling without thermal runaway. The diodes are available in a variety of packages, including TO-220, TO-247, and SOT-227.
Features
- High avalanche (UIS) capability
- Enhanced surge current capability
- Superior figure of merit QC/IF
- Low thermal resistance
- 175°C maximum operating temperature
- Temperature-independent fast switching
- Positive temperature coefficient of VF
Applications
- Switched mode power supplies (SMPS)
- Solar inverters
- Server and telecom power supplies
- Battery chargers
- Uninterruptible power supplies (UPS)
- Motor control
- Power factor correction (PFC)
Additional Resources
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