GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.
Softer RDS(ON) v/s temperature dependency
LoRing™ - electromagnetically optimized design
Smaller RG(INT) and lower QG
Low device capacitances (COSS CRSS)
Industry-leading UIL and short-circuit robustness
Robust body diode with low VF and low QRR
Normally off-stable temperature up to 175°C
Optimized package with separate driver source pin
Solar string inverters
EV- fast chargers
Switched-mode power supply
Solid-state circuit breakers
GeneSiC Semiconductor SiC MOSFETs
Supported by fast turn-around high volume manufacturing further enhances their value proposition.