Back to Diodes Incorporated

Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor

Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging produce high-on-current pulses with fast edges. This Diodes Incorporated Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Features

  • IUSB = 35A typical
  • BVCBO > 80V
  • BVCEO > 15V
  • Specifically designed for low voltage avalanche mode operation
  • Low profile 0.62mm high package for thin applications
  • Sidewall tin plating for wettable flanks in AOI
  • Lead-free and RoHS compliant
  • Halogen and antimony-free Green device
  • The FMMT411FDBWQ is suitable for automotive applications requiring specific change control
    • AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities

Specifications

  • W-DFN2020-3/SWP (Type A) package
  • Nominal package height of 0.62mm
  • Package material is a molded plastic green molding compound. UL Flammability Rating 94V-0
  • Moisture sensitivity of Level 1 per J-STD-020
  • Terminals are matte tin finish and solderable per MIL-STD-202, Method 208
  • Weight (0.01grams) (Approximate)

Applications

  • Laser diode drivers for ranging and measurement (LIDAR)
  • Radar systems
  • Fast-edge switch generators
  • High-speed pulse generators

Package Dimensions

Mechanical Drawing - Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor
Published: 2022-11-16 | Updated: 2022-11-23