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Central Semiconductor CxxDM Surface-Mount Enhancement-Mode MOSFETs

Central Semiconductor CxxDM Surface-Mount Enhancement-Mode MOSFETs are designed for high-speed pulsed amplifier and driver applications. These MOSFETs offer a very low RDS(ON) and low threshold voltage.

The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs.

The CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. CEDM7004VL is an N-channel enhancement-mode MOSFET, manufactured by the N-channel DMOS process and designed for high-speed pulsed amplifier and driver applications. 

CEDM8004VL is a P-channel enhancement-mode MOSFET, manufactured by the P-channel DMOS process, designed for high-speed pulsed amplifier and driver applications. 

Features

  • ESD protection up to 2kV
  • 350mW power dissipation or 100mW power dissipation (CEDM7001)
  • Low RDS(ON)
  • Low threshold voltage
  • Logic level compatible
  • Surface mountable

Applications

  • Load/power switches
  • Battery-powered portable equipment
  • Power supply converter circuits
  • Battery charging
  • Boost switch
  • Electro-luminescent backlighting
  • DC-DC converters
Published: 2012-02-21 | Updated: 2025-08-19