Alliance Memory P33 Micron Parallel NOR Flash Embedded Memory
Alliance Memory P33 Micron Parallel NOR Flash Embedded Memory offers more density in less space with support for code and data storage. This high-speed interface device features high-performance synchronous-burst read mode, fast asynchronous access times, low power, and flexible security options. The Alliance Memory P33 Micron Parallel NOR Flash Embedded Memory is manufactured using Micron 65nm process technology and provides high performance at low voltage on a 16-bit data bus. The module defaults to asynchronous page-mode read upon initial power-up or return from reset and configuring the read configuration register enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal.
Features
- Security
- One-time programmable register with 64x OTP bits programmed with unique information from Micron and 2112x OTP bits available for customer programming
- VPP = VSS absolute write protection
- Power-transition erase/program lockout
- Individual zero-latency block locking
- Individual block lock-down
- Password access
- High performance
- Bottom boot block configuration
- Software
- 25μs (typical) program suspend
- 25μs (typical) erase suspend
- Flash data integrator optimized
- Basic command set and Extended Function Interface (EFI) command set compatible
- Common flash interface
Specifications
- Voltage and power
- 2.3V to 3.6V VCC (core)
- 2.3V to 3.6V VCCQ (I/O) voltage
- 70µA (typical) for 512Mb; 75µA (typical) for 1Gb standby current
- 21mA (typical), 24mA (maximum) continuous synchronous read current at 52MHz
- Quality and reliability
- JESD47 compliant
- -40°C to +85°C operating temperature range
- Minimum 100,000 ERASE cycles per block
- 65nm process technology
Easy BGA Block Diagram
