MACOM CMPA5259050F GaN MMIC
MACOM CMPA5259050F Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) is based on high electron mobility transistor (HEMT) technology and is ideal for radar power amplifiers. The module provides a 55W peak output power, 28V operating voltage, and a frequency range of 5.2GHz to 5.9GHz. The GaN MMIC is designed for high efficiency, high gain, and wide bandwidth capabilities, making it ideal for 5.2GHz to 5.9GHz radar amplifier applications. MACOM CMPA5259050F GaN MMIC offers a matched impedance of 50Ω and is available in a 0.5" square ceramic/metal flange package.
Features
- Based on HEMT technology
- High efficiency, high gain, and wide bandwidth capabilities
- 50Ω matched impedance
- 31dB typical small signal gain
- 55W peak output power (100µS pulse width, 10% duty cycle)
- 28V operation
- 5.2GHz to 5.9GHz frequency range
- 0.5" square ceramic/metal flange package
Applications
- C-band
- Radar
Development Tools
MACOM CMPA5259050F-AMP Demonstration Amplifier Circuit
Offers a test board with the CMPA5259050F GaN MMICs in a ceramic/metal flange package installed.
Published: 2019-05-07
| Updated: 2024-01-19