Infineon Technologies BGA855N6 Low Noise RF Amplifier

Infineon Technologies BGA855N6 Low Noise RF Amplifier enhances GNSS signal sensitivity for L-band applications operating within 1164MHz to 1300MHz frequency range. This amplifier covers GPS L2/L5, Galileo E5a, E5b, E6, Glonass G3, G2, Beidou B3, and B2 bands. The BGA855N6 amplifier features 17.8dB insertion power gain, low current consumption, high linearity performance, internally matched RF output, and high accuracy. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. This amplifier is based upon Infineon Technologies‘ B9HF Silicon Germanium technology and operates from 1.1V to 3.3V supply voltage.

Features

17.8dB insertion power gain
0.60dB low noise figure
4.8mA low current consumption
0dBm high linearity performance IIP3
1164MHz to 1300MHz operating frequency range
1.1V to 3.3V supply voltage
Ultra small TSNP-6-10 leadless package with 0.7mm² x 1.1mm² footprint
B9HF Silicon Germanium technology
RF output internally matched to 50Ω
Only one external matching component needed
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
Specifically designed for :
- L2/L5 GPS signals
- E5a/E5b/E6 Galileo signals
- G2/G3 Glonass signals
- B2/B3 Beidou signals