Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1.034In Stock
20,57 €
12,80 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683In Stock
66,93 €
59,30 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS 198In Stock
48,31 €
34,65 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS 84In Stock
29,15 €
18,88 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS 169In Stock
900Expected 10/29/2026
14,50 €
8,11 €
7,91 €
7,90 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS 397In Stock
9,36 €
5,09 €
4,71 €
4,63 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC 177In Stock
900Expected 3/22/2027
11,68 €
6,85 €
6,26 €
6,15 €
6,12 €
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
4.950On Order
10,64 €
5,75 €
5,43 €
5,16 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC
2.220On Order
8,08 €
4,32 €
3,97 €
3,69 €
Min.: 1
Mult.: 1
Through Hole TO-3PFM-3 1 Channel 1.7 kV 3.7 A 1.5 Ohms - 6 V, + 22 V 4 V 14 nC - 55 C + 175 C 35 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
446Expected 2/8/2027
37,07 €
25,98 €
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement