GaN Semiconductors

Results: 680
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Renesas Electronics GaN FETs 700V, 130mohm GaN FET in TO-220 Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 240mohm GaN FET in DPAK Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 480mohm GaN FET in DPAK Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power Non-Stocked Lead-Time 52 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

STMicroelectronics Gate Drivers High voltage, high-speed half-bridge gate driver for GaN power switches Non-Stocked Lead-Time 40 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Microchip Technology RF Amplifier 2.7-3.5 GHz 70W GaN PA MMIC
Non-Stocked
Min.: 1
Mult.: 1

Texas Instruments Gate Drivers Automotive 7A and 5A single-channel gate Non-Stocked Lead-Time 26 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Texas Instruments Gate Drivers 650V 105mohm GaN hal f-bridge with integ
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000
Texas Instruments Gate Drivers 650V 95mohm GaN half -bridge with integr Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 2.000
Texas Instruments Gate Drivers SMART 140 MOHM E-GAN FET WITH DRIVER 19-VQFN Non-Stocked Lead-Time 26 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 50-m? GaN FET with integrated driv
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600V 30mohm GaN FET with integrated driv Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000