HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 719
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs SMPD MOSFETs Power Device
80Expected 12/29/2026
Min.: 1
Mult.: 1

Si SMD/SMT SMPD-24 N-Channel 1 Channel 300 V 102 A 20 mOhms - 20 V, 20 V 3 V 376 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 200V 36A N-CH X3CLASS
293Expected 8/31/2026
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 36 A 45 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A
15Expected 1/26/2027
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 360 A 2.9 mOhms - 20 V, 20 V 4.5 V 525 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs HiPERFET Id12 BVdass500
99Expected 2/10/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 500 mOhms - 30 V, 30 V - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 16A
300Expected 8/28/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs 7 Amps 1000V
290Expected 11/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 7 A 1.9 Ohms - 30 V, 30 V - 55 C + 150 C 300 W HiPerFET Tube
IXYS MOSFETs TO252 650V 4A N-CH X2CLASS
690On Order
Min.: 1
Mult.: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 650 V 4 A 850 mOhms - 30 V, 30 V 3 V 8.3 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 50A N-CH X3CLASS Non-Stocked Lead-Time 40 Weeks
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 50 A 30 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 150V Non-Stocked Lead-Time 22 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 102 A HiPerFET Tube
IXYS MOSFETs 600V 10A Non-Stocked Lead-Time 26 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V 5.5 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Reel
IXYS MOSFETs 110Amps 150V Non-Stocked Lead-Time 22 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 150 V 110 A 11 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/12A TO-263 Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 100V Non-Stocked Lead-Time 22 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 130 A 9.1 mOhms HiPerFET Tube
IXYS MOSFETs TO263 850V 14A N-CH HIPER Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 16A Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 16 A 360 mOhms HiPerFET Tube
IXYS MOSFETs 600V 16A Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-263 Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 20 A 300 mOhms HiPerFET Tube
IXYS MOSFETs TO263 600V 22A N-CH POLAR Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50
Si HiPerFET Tube
IXYS MOSFETs TrenchT2 HiperFETs Power MOSFET Non-Stocked Lead-Time 33 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs TrenchT2 HiperFETs Power MOSFET Non-Stocked Lead-Time 33 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 26 A 240 mOhms HiPerFET Tube