CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4.511In Stock
Cut Tape
3,35 €
2,20 €
1,54 €
1,26 €
1,21 €
Reel
1,07 €
Min.: 1
Mult.: 1
: 5.000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4.815In Stock
Cut Tape
2,47 €
1,60 €
1,10 €
0,886 €
Reel
0,703 €
Min.: 1
Mult.: 1
: 5.000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4.699In Stock
Cut Tape
2,15 €
1,38 €
0,946 €
0,753 €
Reel
0,586 €
Min.: 1
Mult.: 1
: 5.000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1.661In Stock
1.800Expected 1/28/2027
Cut Tape
9,47 €
5,42 €
5,14 €
4,85 €
4,20 €
Reel
4,16 €
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 977In Stock
Cut Tape
7,37 €
4,01 €
3,68 €
3,62 €
3,16 €
Reel
3,07 €
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1.262In Stock
Cut Tape
4,06 €
2,68 €
1,90 €
1,63 €
Reel
1,38 €
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 602In Stock
Cut Tape
11,46 €
7,69 €
7,12 €
6,17 €
Reel
5,38 €
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 467In Stock
Cut Tape
9,49 €
5,28 €
5,04 €
4,28 €
Reel
4,28 €
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2.068In Stock
Cut Tape
7,59 €
4,14 €
3,71 €
Reel
3,28 €
3,20 €
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
6,34 €
3,40 €
3,11 €
2,51 €
Reel
2,51 €
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
9.060On Order
Cut Tape
10,94 €
6,20 €
6,11 €
6,05 €
5,19 €
Reel
5,19 €
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
3.596On Order
Cut Tape
6,18 €
3,66 €
3,16 €
2,90 €
2,49 €
Reel
2,49 €
Min.: 1
Mult.: 1
: 1.800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN