Nano Cap™ 650V GaN HEMT Power Stage ICs
ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. These ICs boast a blend of high power density and efficiency. The devices integrate a 650V enhancement GaN HEMT and a silicon driver. ROHM Semiconductor Nano Cap 650V GaN HEMT Power Stage ICs are ideal for applications that include industrial equipment, power supplies, bridge topology, and adapters.
No Results Found.
Try modifying your search term below or visit our Help Centre.
Try modifying your search term below or visit our Help Centre.
Search Suggestions
- Check spelling of part number or keywords
- Use fewer or different keywords
- Search on 1 part number at a time
- Apply 1 filter at a time