Power Silicon Carbide SCHOTTKY Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Results: 45
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Vr - Reverse Voltage
Series
Packaging
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
Datasheet
925Expected 1/11/2027
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C16ET07T-M3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
Datasheet
1.000Expected 2/5/2027
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C16ET07THM3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
Datasheet
475Expected 2/8/2027
Min.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C30CP07L-M3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
Datasheet
490Expected 2/5/2027
Min.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C30CP07LHM3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
Datasheet
475Expected 10/23/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C 1.2 kV VS-4C30EP12L-M3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
Datasheet
500Expected 10/23/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C 1.2 kV VS-4C30EP12LHM3 Tube
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
794Expected 10/23/2026
Min.: 1
Mult.: 1
: 800

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C 1.2 kV VS-4C30ET12S2L-M3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
800Expected 10/23/2026
Min.: 1
Mult.: 1
: 800

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C 1.2 kV VS-4C30ET12S2LHM3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
Datasheet
1.000Expected 10/23/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C 1.2 kV VS-4C30ET12T-M3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
Datasheet
1.000Expected 10/23/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C 1.2 kV VS-4C30ET12THM3 Tube
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
735Expected 9/25/2026
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 650 V 4C08ET07S2L-M3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
800Expected 10/23/2026
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 650 V 4C08ET07S2LHM3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
Datasheet
925Expected 10/23/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 650 V VS-4C08ET07THM3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
Datasheet
1.000Expected 10/23/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 650 V VS-4C08ET07THM3 Tube
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
Datasheet
500Expected 2/8/2027
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 10 A 1.2 kV 1.34 V 50 A 162 uA - 55 C + 175 C 1.2 kV VS-4C10EP12L-M3 Tube
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
800On Order
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C 650 V VS-4C12ET07S2L-M3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
Datasheet
500Expected 2/8/2027
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C16EP07LHM3 Tube
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
780Expected 2/12/2027
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C16ET07S2L-M3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
Datasheet
760Expected 2/19/2027
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C16ET07S2LHM3 Reel, Cut Tape
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
Datasheet
500Expected 2/15/2027
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C 650 V VS-4C16EP07L-M3 Tube