Results: 129
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
STMicroelectronics MOSFETs N-Ch 30 Volt 90 Amp Non-Stocked Lead-Time 15 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 90 A 6.5 mOhms - 20 V, 20 V - 65 C + 150 C 150 W Enhancement Tube
STMicroelectronics MOSFETs Dual N-CH 30 V 10 A SO-8 STri Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

Si SMD/SMT SOIC-8 N-Channel 2 Channel 30 V 10 A 21 mOhms - 22 V, 22 V 1 V 4.6 nC - 55 C + 150 C 2.5 W Enhancement STripFET Reel
STMicroelectronics MOSFETs N-Ch 55 Volt 80 Amp Non-Stocked Lead-Time 15 Weeks
Min.: 1.000
Mult.: 1.000
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 55 V 80 A 8 mOhms - 20 V, 20 V 2 V 150 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Reel
STMicroelectronics MOSFETs N-Ch, 55V-2.9ohms 120A Non-Stocked Lead-Time 15 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 120 A 3.7 mOhms - 18 V, 18 V 1 V 80 nC - 55 C + 175 C 312 W Enhancement AEC-Q100 STripFET Tube