CGHV31500F1 MACOM | Mouser Bulgaria

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not sell this product in your region.
RoHS:	N
Mounting Style:	Screw Mount
Package/Case:	440226-2
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	500 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 75 C
Pd - Power Dissipation:	418 W
Brand:	MACOM
Maximum Drain Gate Voltage:	- 2.7 V
Maximum Operating Frequency:	3.1 GHz
Minimum Operating Frequency:	2.7 GHz
Output Power:	500 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	1
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CGHV31500F1 Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.a.2

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

CGHV31500F1 2.7GHz to 3.1GHz, 500W GaN HEMT

MACOM CGHV31500F1 2.7GHz to 3.1GHz, 500W GaN HEMT offers high efficiency and high gain designed explicitly for the 2.7GHz to 3.1GHz S-Band radar band. The gallium nitride (GaN) high electron mobility transistor (HEMT) delivers an extended pulse capability to meet emerging radar architecture trends.