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PD84006-E

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-PD84006-E

Mfr. No:

PD84006-E

Mfr.:

STMicroelectronics

Description:

RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

PD84006-E Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Delivery Restriction:

Mouser does not presently sell this product in your region.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	RF MOSFET Transistors
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	5 A
Vds - Drain-Source Breakdown Voltage:	25 V
Operating Frequency:	1 GHz
Gain:	13 dB
Output Power:	6 W
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package/Case:	PowerSO-10RF-Formed-4
Transistor Type:	LDMOS FET
Packaging:	Tube
Brand:	STMicroelectronics
Moisture Sensitive:	Yes
Pd - Power Dissipation:	59 W
Product Type:	RF MOSFETs
Series:	PD84006-E
Factory Pack Quantity:	400
Subcategory:	RF Transistors
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 15 V
Unit Weight:	3 g

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Filter Document:

Datasheet

PD84006-E Datasheet (PDF)

PCN

Top Metallization Switch from AlSiCu to AlCu on all LDMOS Technologies (PDF)

Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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Advanced STH5P LDMOS technology targeted for operation up to 2.0 GHz.

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Availability

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