Central Semiconductor SiC MOSFETs

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Central Semiconductor SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC 27In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
Central Semiconductor SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC 30In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 37 A 20 V 2.6 V - 55 C + 175 C 28 W Depletion
Central Semiconductor SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC 40In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 18 A 150 mOhms 20 V 4 V 55 C - 55 C + 175 C 28 W Depletion