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IMZA75R008M1HXKSA1

Name: Infineon IMZA75R008M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA75R008M1HXKS
Price: 27.74 EUR
Availability: InStock

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Mouser No:

726-IMZA75R008M1HXKS

Mfr. No:

IMZA75R008M1HXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMZA75R008M1HXKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMZA75R008M1HXKSA1

In Stock: 245

Stock:: 245 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	27,74 €	27,74 €
	19,44 €	194,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	163 A
Rds On - Drain-Source Resistance:	10.6 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	178 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	517 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	G2
Factory Pack Quantity:	240
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	IMZA75R008M1HXKSA1 SP005970686

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Datasheet

IMZA75R008M1HXKSA1 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 750V G1 MOSFETs

Infineon Technologies CoolSiC™ 750V G1 MOSFETs excel in performance, reliability, and robustness. The Infineon Technologies CoolSiC 750V G1 features flexible gate driving for simplified, cost-effective system design. The MOSFETs allow for optimized efficiency and power density.