TO-220AB-3 MOSFETs

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)
Datasheet
1.789In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 100 V 80 A 8.4 mOhms - 20 V, 20 V 4 V 38 nC - 55 C + 150 C 89 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
Datasheet
1.953In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 60 V 105 A 4.6 mOhms - 20 V, 20 V 2.5 V 47 nC - 55 C + 150 C 89 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 35A 3rd Gen, Fast Switch
Datasheet
759In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 650 V 35 A 115 mOhms - 20 V, 20 V 5 V 72 nC - 55 C + 150 C 370 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 20A 3rd Gen, Fast Switch
Datasheet
757In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 650 V 20 A 205 mOhms - 20 V, 20 V 5 V 40 nC - 55 C + 150 C 220 W Enhancement Tube
Infineon Technologies IRF3205ZPBFAKSA1
Infineon Technologies MOSFETs IR FET UP TO 60V
Datasheet
508In Stock
1.000Expected 6/10/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 55 V 75 A 6.5 mOhms - 20 V, 20 V 4 V 76 nC - 55 C + 175 C 170 W Enhancement Tube
Infineon Technologies IRFB4019PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
629In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 150 V 17 A 95 mOhms - 20 V, 20 V 4.9 V 13 nC - 55 C + 175 C 80 W Enhancement Tube
Infineon Technologies IRFB3607PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
1.565In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 75 V 80 A 9 mOhms - 20 V, 20 V 4 V 56 nC - 55 C + 175 C 140 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 24A 3rd Gen, Fast Switch
Datasheet
668In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 5 V 45 nC - 55 C + 150 C 253 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 72A N-CH MOSFET
Datasheet
2.003In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 24 A 153 mOhms - 30 V, 30 V 6.5 V 38 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 650V 15A 3rd Gen, Fast Switch
Datasheet
934In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 650 V 15 A 315 mOhms - 20 V, 20 V 5 V 27.5 nC - 55 C + 150 C 161 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 180A(Id), (4.5V Drive)
Datasheet
854In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 40 V 180 A 1.64 mOhms - 20 V, 20 V 2.5 V 168 nC - 55 C + 150 C 125 W Enhancement Tube
Vishay Semiconductors MOSFETs N-CHANNEL 650V
Datasheet
795In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 650 V 33 A 115 mOhms 20 V 5 V 83 nC - 55 C + 150 C 313 W Enhancement
ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
Datasheet
549In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 60 V 70 A 7.2 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 96 W Enhancement Tube
Panjit MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 215 A
Datasheet
1.980In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 60 V 215 A 2.6 mOhms - 20 V, 20 V 3 V 82 nC - 55 C + 175 C 214 W Enhancement AEC-Q101 Tube
ROHM Semiconductor MOSFETs TO220 N-CH 80V 100A
Datasheet
974In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 80 V 100 A 5.1 mOhms - 20 V, 20 V 4 V 46 nC - 55 C + 150 C 89 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 N-CH 80V 225A
Datasheet
997In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 80 V 225 A 2.2 mOhms - 20 V, 20 V 4 V 185 nC - 55 C + 150 C 189 W Enhancement Tube
Infineon Technologies MOSFETs IR FET UP TO 60V
Datasheet
1.708In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 60 V 16 A 4.2 mOhms - 20 V, 20 V 4 V 120 nC - 55 C + 175 C 230 W Enhancement Tube
Panjit MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 95 A
Datasheet
1.907In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 60 V 95 A 6.1 mOhms - 20 V, 20 V 3 V 40 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 Tube
Panjit MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 64 A
Datasheet
1.429In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 60 V 64 A 9 mOhms - 20 V, 20 V 3 V 27 nC - 55 C + 175 C 75 W Enhancement AEC-Q101 Tube
Vishay MOSFETs N-CHANNEL 650V
Datasheet
950In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 650 V 40 A 65 mOhms 30 V 5 V 132 nC - 55 C + 150 C 250 W Enhancement
Micro Commercial Components (MCC) MOSFETs N-CHANNEL MOSFET,TO-220AB(H)
Datasheet
Product Comments

Si Through Hole TO-220AB-3 N-Channel 1 Channel 100 V 240 A 2.3 mOhms - 20 V, 20 V 2.8 V 257 nC - 55 C + 150 C 208 W Enhancement Bulk
Panjit MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
Datasheet
1.997In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 39 A 99 mOhms - 30 V, 30 V 4 V 60 nC - 55 C + 150 C 308 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 42A N-CH MOSFET
Datasheet
897In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 42 A 260 mOhms - 30 V, 30 V 6 V 20 nC - 55 C + 150 C 132 W Enhancement Tube
ROHM Semiconductor MOSFETs Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
1.869In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 66 A 165 mOhms - 30 V, 30 V 6 V 33 nC - 55 C + 150 C 205 W Enhancement Tube
ROHM Semiconductor MOSFETs Nch 600V 27A, TO-220AB, Power MOSFET: R6027YNX3 is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
1.951In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 81 A 135 mOhms - 30 V, 30 V 6 V 40 nC - 55 C + 150 C 245 W Enhancement Tube