STMicroelectronics STU6N65M2 Series MOSFETs

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
STMicroelectronics MOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
Datasheet
Product Comments
45In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 4 A 1.35 Ohms - 25 V, 25 V 3 V 9.8 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs PTD HIGH VOLTAGE
Datasheet
Non-Stocked
Min.: 3.000
Mult.: 3.000

Si Through Hole IPAK-3 N-Channel 1 Channel 650 V 2.5 A 1.35 Ohms - 25 V, 25 V 2 V 9.8 nC - 55 C + 150 C 60 W Enhancement Tube