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STF7NM80

Name: STMicroelectronics STF7NM80
Brand: STMicroelectronics
SKU: 511-STF7NM80
Price: 1.74 EUR
Availability: OutOfStock

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Mouser No:

511-STF7NM80

Mfr. No:

STF7NM80

Mfr.:

STMicroelectronics

Description:

MOSFETs N-CH 800V IPAK DPAK Mdmesh PWR MOSFET

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Datasheet:

STF7NM80 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STF7NM80

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Minimum: 1000 Multiples: 1000

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,74 €	1.740,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	6.5 A
Rds On - Drain-Source Resistance:	1.05 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IT
Fall Time:	10 ns
Forward Transconductance - Min:	4 S
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STF7NM80
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	2 g

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Datasheet

STF7NM80 Datasheet (PDF)

PCN

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.