Microchip Power MOS 8 MOSFETs

Results: 23
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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

Microchip Technology MOSFETs MOSFET MOS8 1000 V 18 A TO-247
Datasheet
44In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 600 mOhms - 30 V, 30 V 4 V 150 nC - 55 C + 150 C 625 W Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 1200 V 4 A TO-220
Datasheet
1.057In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 5 A 3.12 Ohms - 30 V, 30 V 4 V 43 nC - 55 C + 150 C 225 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 1200 V 13 A TO-247
Datasheet
6In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 14 A 910 mOhms - 30 V, 30 V 4 V 145 nC - 55 C + 150 C 625 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs MOSFET MOS8 1200 V 14 A TO-247
Datasheet
30In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 14 A 870 mOhms - 30 V, 30 V 4 V 145 nC - 55 C + 150 C 625 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 800 V 22 A TO-247
Datasheet
72In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 23 A 400 mOhms - 30 V, 30 V 4 V 150 nC - 55 C + 150 C 625 W Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 1200 V 24 A TO-264
Datasheet
1In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 24 A 500 mOhms - 30 V, 30 V 4 V 260 nC - 55 C + 150 C 1.04 kW Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 500 V 30 A TO-247
Datasheet
92In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 30 A 170 mOhms - 30 V, 30 V 4 V 115 nC - 55 C + 150 C 415 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 500 V 37 A TO-247
Datasheet
69In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 37 A 130 mOhms - 30 V, 30 V 4 V 145 nC - 55 C + 150 C 520 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 500 V 42 A TO-247
Datasheet
51In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 42 A 110 mOhms - 30 V, 30 V 4 V 170 nC - 55 C + 150 C 625 W Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 500 V 56 A TO-264
Datasheet
56In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 56 A 85 mOhms - 30 V, 30 V 4 V 220 nC - 55 C + 150 C 780 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 1200 V 7 A TO-247
Datasheet
107In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 7 A 1.57 Ohms - 30 V, 30 V 4 V 80 nC - 55 C + 150 C 335 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs MOSFET MOS8 1200 V 7 A TO-247
Datasheet
151Expected 4/20/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 8 A 1.5 Ohms - 30 V, 30 V 4 V 80 nC - 55 C + 150 C 335 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs MOSFET MOS8 1000 V 8 A TO-247
Datasheet
189In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 8 A 1.53 Ohms - 30 V, 30 V 4 V 60 nC - 55 C + 150 C 290 W Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 1000 V 37 A TO-264
Datasheet
100On Order
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 37 A 290 mOhms - 30 V, 30 V 4 V 305 nC - 55 C + 150 C 1.135 kW Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs MOSFET MOS8 1000 V 14 A TO-247
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 kV 14 A 710 mOhms - 30 V, 30 V 4 V 120 nC - 55 C + 150 C 500 W Enhancement Power MOS 8 Tube

Microchip Technology MOSFETs FREDFET MOS8 1000 V 17 A TO-247
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 17 A 670 mOhms - 30 V, 30 V 4 V 150 nC - 55 C + 150 C 625 W Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs FREDFET MOS8 1200 V 26 A TO-247 MAX
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole T-MAX-3 N-Channel 1 Channel 1.2 kV 27 A 480 mOhms - 30 V, 30 V 4 V 300 nC - 55 C + 150 C 1.135 kW Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs FREDFET MOS8 1200 V 26 A TO-264
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1.2 kV 27 A 480 mOhms - 30 V, 30 V 4 V 300 nC - 55 C + 150 C 1.135 kW Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 1200 V 28 A TO-264
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 29 A 450 mOhms - 30 V, 30 V 4 V 300 nC - 55 C + 150 C 1.135 kW Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 500 V 56 A TO-247 MAX
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole T-MAX-3 N-Channel 1 Channel 500 V 56 A 85 mOhms - 30 V, 30 V 4 V 220 nC - 55 C + 150 C 780 W Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 600 V 56 A TO-247 MAX
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole T-MAX-3 N-Channel 1 Channel 600 V 60 A 90 mOhms - 30 V, 30 V 4 V 280 nC - 55 C + 150 C 1.04 kW Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs FREDFET MOS8 600 V 66 A TO-247 MAX
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole T-MAX-3 N-Channel 600 V 70 A 75 mOhms - 30 V, 30 V 4 V 330 nC - 55 C + 150 C 1.135 kW Enhancement Power MOS 8 Tube
Microchip Technology MOSFETs MOSFET MOS8 600 V 66 A TO-247 MAX
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole T-MAX-3 N-Channel 1 Channel 600 V 70 A 75 mOhms - 30 V, 30 V 4 V 330 nC - 55 C + 150 C 1.135 kW Enhancement Power MOS 8 Tube