IXYS IXTP36N30 Series MOSFETs

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs 36 Amps 300V 0.11 Rds
Datasheet
4.665In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 36 A 110 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 300 W Enhancement PolarHT Tube
IXYS MOSFETs 36 Amps 300V 110 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 36 A 110 mOhms Tube