Toshiba IGBTs

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Toshiba IGBTs 1350V DISCRETE IGBT TRANS 3.438In Stock
Min.: 1
Mult.: 1
Reel: 30

Si Through Hole Single 1.35 kV 2.15 V - 25 V, 25 V 60 A 348 W - 55 C + 175 C Reel, Cut Tape
Toshiba IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A 55In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.35 kV 2.4 V - 25 V, 25 V 40 A 312 W - 55 C + 175 C Tube
Toshiba IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A 121In Stock
Min.: 1
Mult.: 1

Si TO-3PN-3 Through Hole Single 1.8 kV 2.9 V - 25 V, 25 V 40 A 375 W - 55 C + 175 C GT40WR21 Tray
Toshiba IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ 107In Stock
Min.: 1
Mult.: 1

Si TO-3PN-3 Through Hole Single 600 V 1.45 V - 25 V, 25 V 50 A 230 W - 55 C + 175 C GT50JR21 Tray
Toshiba IGBTs IGBT for Soft Switching Apps 53In Stock
Min.: 1
Mult.: 1

Si Through Hole Single 600 V 1.55 V - 25 V, 25 V 50 A 230 W - 55 C + 175 C GT50JR22 Tray


Toshiba IGBTs 600V/30A DIS 68In Stock
Min.: 1
Mult.: 1

Si TO-3P-3 Through Hole Single 600 V 2 V - 20 V, 20 V 30 A 170 W - 55 C + 150 C GT30J121 Tube
Toshiba IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) MQO=25 V=1200 IC=40A 240In Stock
Min.: 1
Mult.: 1

Si TO-3PN-3 Through Hole Single 1.2 kV 1.5 V - 25 V, 25 V 40 A 230 W - 55 C + 175 C GT40QR21 Tray
Toshiba IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=40 Vces=1350
75Expected 4/16/2026
Min.: 1
Mult.: 1

Si TO-3PN-3 Through Hole Single 1.35 kV 1.6 V - 25 V, 25 V 40 A 230 W - 55 C + 175 C GT40RR21 Tray
Toshiba IGBTs Pb-F DISCRETE IGBT TRANSISTOR TO-220SIS P=30W F=1MHZ Non-Stocked
Min.: 1
Mult.: 1

Si TO-220SIS-3 Through Hole Single 600 V 1.5 V - 25 V, 25 V 15 A 30 W - 55 C + 150 C GT15J341 Tube
Toshiba IGBTs DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A Non-Stocked
Min.: 1
Mult.: 1

Si TO-220SIS-3 Through Hole Single 600 V 1.5 V - 25 V, 25 V 20 A 45 W - 55 C + 150 C GT20J341 Tube
Toshiba IGBTs 650V SILICON N-CHANNEL IGBT, TO-3PN, IC=60A Non-Stocked Lead-Time 57 Weeks
Min.: 1
Mult.: 1

Tube
Toshiba IGBTs Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V Non-Stocked
Min.: 1
Mult.: 1

Si TO-3PN-3 Through Hole Single 600 V 1.6 V - 25 V, 25 V 50 A 200 W - 55 C + 175 C GT50J341 Tray