Half Bridge IGBT Modules

Results: 36
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Package/Case Minimum Operating Temperature Maximum Operating Temperature Packaging
Vishay Semiconductors IGBT Modules Modules IGBT - IAP IGBT 60In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 650 V 193 A 240 nA 517 W Module - 40 C + 175 C Bulk
IXYS IGBT Modules XPT IGBT Module 2In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 1.2 kV 1.8 V 465 A 300 uA 1.5 kW - 40 C + 125 C Bulk
Microchip Technology APTGT200A120G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C 4In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 1.2 kV 1.7 V 280 A 500 nA 890 W SP6 - 40 C + 100 C Tube
Microchip Technology APTGT50A120T1G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP1 25In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 1.2 kV 1.7 V 75 A 400 nA 277 W SP1-12 - 40 C + 100 C Tube
Infineon Technologies IGBT Modules 62 mm C-Series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode 30In Stock
Min.: 1
Mult.: 1

IGBT Module Half Bridge 1.2 kV 1.5 V 800 A 100 nA 106.4 mm x 61.4 mm - 40 C + 175 C Tray
Infineon Technologies IGBT Modules EASY PLUS 29In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Half Bridge 1.2 kV 2.55 V 175 A 100 nA 20 mW EasyPACK - 40 C + 125 C Tray
Infineon Technologies IGBT Modules 1200 V, 800 A dual IGBT module 32In Stock
Min.: 1
Mult.: 1

IGBT Module Half Bridge 1.2 kV 1.5 V 800 A 100 nA 106.4 mm x 61.4 mm - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 800 A dual IGBT module 28In Stock
Min.: 1
Mult.: 1

IGBT Module Half Bridge 1.2 kV 1.5 V 800 A 100 nA 106.4 mm x 61.4 mm - 40 C + 175 C Tray
Vishay Semiconductors IGBT Modules Modules IGBT - IAP IGBT 27In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 650 V 476 A 480 nA 1 kW Module - 40 C + 175 C Bulk
Vishay Semiconductors IGBT Modules Modules IGBT - IAP IGBT 25In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 650 V 372 A 360 nA 789 W Module - 40 C + 175 C Bulk
Vishay Semiconductors IGBT Modules Modules IGBT - IAP IGBT 10In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 650 V 96 A 120 nA 259 W Module - 40 C + 175 C Bulk


Vishay Semiconductors IGBT Modules MTP - HALF BRIDGE IGBT 126In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Half Bridge 1.2 kV 2.24 V 75 A 250 nA 305 W MTP - 40 C + 150 C Tube
onsemi NXH80T120L2Q0S2G
onsemi IGBT Modules PIM 1200V 80A TNPC STANDARD PINOUT 23In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Half Bridge 1.2 kV 2.05 V 80 A 300 nA 158 W - 40 C + 150 C Tray
Vishay Semiconductors IGBT Modules Modules IGBT - IAP IGBT 1In Stock
Min.: 1
Mult.: 1

IGBT Modules Half Bridge 650 V 247 A 240 nA 517 W Module - 40 C + 175 C Bulk
Microchip Technology IGBT Modules PM-IGBT-SBD-BL1 9In Stock
Min.: 1
Mult.: 1
IGBT Modules Half Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C

Microchip Technology IGBT Modules PM-IGBT-TFS-SP1 Non-Stocked Lead-Time 26 Weeks
Min.: 13
Mult.: 1

IGBT Modules Half Bridge 1.7 kV 2 V 75 A 400 nA 312 W SP1-12 - 40 C + 100 C Tube
Microchip Technology IGBT Modules PM-IGBT-TFS-SP1 Non-Stocked Lead-Time 26 Weeks
Min.: 19
Mult.: 1

IGBT Modules Half Bridge 600 V 1.5 V 100 A 600 nA 250 W SP-1 - 40 C + 175 C Tube
STMicroelectronics IGBT Modules SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

SiC IGBT Modules Half Bridge 600 V 2.15 V 3 A N2DIP-26 + 175 C Tube
STMicroelectronics IGBT Modules SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

SiC IGBT Modules Half Bridge 600 V 2.15 V 5 A N2DIP-26 + 175 C Tube
STMicroelectronics IGBT Modules SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I Non-Stocked Lead-Time 16 Weeks
Min.: 360
Mult.: 360

SiC IGBT Modules Half Bridge 600 V 2.15 V 5 A 13.6 W N2DIP-26 - 40 C + 125 C Tube
Vishay IGBT Modules Modules IGBT - DIAP IGBT Non-Stocked
Min.: 1
Mult.: 1
Power Modules Half Bridge 600 V 1.29 V 600 A 200 nA 864 W Dual INT-A-PAK - 40 C + 175 C
onsemi IGBT Modules PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN) Non-Stocked Lead-Time 16 Weeks
Min.: 24
Mult.: 24

IGBT Modules Half Bridge 1.2 kV 1.7 V 75 A 300 nA 82 W Q0PACK - 40 C + 175 C Tray
Microchip Technology APTGT100A60T1G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP1 Non-Stocked Lead-Time 26 Weeks
Min.: 17
Mult.: 1

IGBT Modules Half Bridge 600 V 1.5 V 150 A 400 nA 340 W SP1-12 - 40 C + 100 C Tube
Microchip Technology APTGT35A120T1G
Microchip Technology IGBT Modules Trench Field Stop 1200V 55A 208W Non-Stocked Lead-Time 26 Weeks
Min.: 18
Mult.: 1

IGBT Modules Half Bridge 1.2 kV 1.7 V 55 A 400 nA 208 W SP1-12 - 40 C + 100 C Tube
Microchip Technology APTGX300A120T6LIAG
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6LI Non-Stocked Lead-Time 26 Weeks
Min.: 3
Mult.: 1

Power Modules Half Bridge 1.2 kV 1.8 V 540 A 400 nA 1.612 kW SP6LI - 40 C + 125 C