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SQJ185ELP-T1_GE3

Name: Vishay SQJ185ELP-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQJ185ELP-T1_GE3
Price: 1.93 EUR
Availability: InStock

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See Product Specifications

Mouser No:

78-SQJ185ELP-T1_GE3

Mfr. No:

SQJ185ELP-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SQJ185ELP-T1_GE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay / Siliconix SQJ185ELP-T1_GE3

In Stock: 2.996

Stock:: 2.996

Can Dispatch Immediately

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On Order:: 3.000

Expected 3/19/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,93 €	1,93 €
	1,22 €	12,20 €
	0,813 €	81,30 €
	0,667 €	333,50 €
	0,656 €	656,00 €
Full Reel (Order in multiples of 3000)
	0,558 €	1.674,00 €
	0,53 €	3.180,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	62 A
Rds On - Drain-Source Resistance:	19.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	145 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	SQJ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

SQJ185ELP-T1_GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

SQJ Automotive MOSFETs

Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET^®Gen IV N-Channel 40V_DS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% R_g and Unclamped Inductive Switching (UIS) tested with less-than 1 Q_gd/Q_gs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low R_DS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK^® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.