POWER MOS 8, ISOTOP IGBT Modules

Results: 2
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Microchip Technology IGBT Modules IGBT PT MOS 8 Combi 600 V 60 A SOT-227
Datasheet
60Expected 3/23/2026
Min.: 1
Mult.: 1

IGBT Modules Single 600 V 2 V 112 A 100 nA 356 W SOT-227-4 - 55 C + 150 C Tube
Microchip Technology IGBT Modules IGBT PT MOS 8 Combi 900 V 46 A SOT-227
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

IGBT Modules 900 V 2.5 V 87 A 100 nA 284 W SOT-227-4 - 55 C + 150 C Tube