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QPD1025L

Name: Qorvo QPD1025L
Brand: Qorvo
SKU: 772-QPD1025L
Price: 1808.94 EUR
Availability: OutOfStock

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Mouser No:

772-QPD1025L

Mfr. No:

QPD1025L

Mfr.:

Qorvo

Description:

GaN FETs 1-1.1GHz 1500 Watt Gain 22.9dB 65V

Datasheet:

QPD1025L Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD1025L

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1.808,94 €	1.808,94 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI-1230-4
Id - Continuous Drain Current:	28 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	758 W
Brand:	Qorvo
Configuration:	Dual Gate Dual Drain
Development Kit:	QPD1025LEVB1
Gain:	22.9 dB
Maximum Drain Gate Voltage:	225 V
Moisture Sensitive:	Yes
Output Power:	1.5 kW
Packaging:	Tray
Product Type:	GaN FETs
Series:	QPD1025L
Factory Pack Quantity:	18
Subcategory:	Transistors
Technology:	GaN SiC
Transistor Type:	HEMT
Unit Weight:	39,665 g

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Datasheet

QPD1025L Datasheet (PDF)

PCN

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TARIC:: 8517620000
CNHTS:: 8541290000
CAHTS:: 8517620090
USHTS:: 8541290055
ECCN:: EAR99

QPD1025 & QPD1025L RF Input-Matched Transistors

Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. The QPD1025 and QPD1025L transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.