QPD1025 GaN FETs

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN 13In Stock
Min.: 1
Mult.: 1

Screw Mount NI-1230-4 HEMT 2 Channel 65 V 28 A - 2.8 V - 40 C + 85 C 685 W
Qorvo GaN FETs 1-1.1GHz 1500 Watt Gain 22.9dB 65V Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

SMD/SMT NI-1230-4 28 A - 40 C + 85 C 758 W
Qorvo GaN FETs DC-12 GHz, 10W, 32V GaN RF Tr Non-Stocked Lead-Time 12 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000
SMD/SMT QFN-16 N-Channel 1 Channel 100 V 610 mA - 40 C + 85 C 17.5 W