QPD0030

Qorvo
772-QPD0030
QPD0030

Mfr.:

Description:
GaN FETs DC-4GHz 45W GaN 48V

ECAD Model:
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In Stock: 66

Stock:
66
Can Dispatch Immediately
On Order:
500
Expected 6/4/2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
89,99 € 89,99 €
70,66 € 1.766,50 €
55,75 € 5.575,00 €
Full Reel (Order in multiples of 250)
45,98 € 11.495,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
QFN-20
48 V
- 40 C
45 W
Brand: Qorvo
Configuration: Single
Gain: 21.7 dB
Maximum Operating Frequency: 4 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 45 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Series: QPD0030
Factory Pack Quantity: 250
Subcategory: Transistors
Technology: GaN
Part # Aliases: 1132528
Unit Weight: 9,664 g
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CNHTS:
8541290000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
5A991.g

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.