MMBT5551W-AU_R1_007A1

Panjit
241-MMBT5551WAUR17A1
MMBT5551W-AU_R1_007A1

Mfr.:

Description:
Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR,AEC-Q101 qualified

Datasheet:
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Learn more about Panjit MMBT5551W-AU_R1_007A1

In Stock: 26.722

Stock:
26.722 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,181 € 0,18 €
0,108 € 1,08 €
0,067 € 6,70 €
0,049 € 24,50 €
0,043 € 43,00 €
Full Reel (Order in multiples of 3000)
0,035 € 105,00 €
0,031 € 186,00 €
0,026 € 234,00 €
0,025 € 600,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-323-3
NPN
Single
160 V
180 V
6 V
200 mV
200 mW
300 MHz
- 55 C
+ 150 C
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: Panjit
Continuous Collector Current: 600 mA
DC Collector/Base Gain hFE Min: 80 V at 10 mA, 5 V
DC Current Gain hFE Max: 250 V at 10 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 5 mg
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Attributes selected: 0

Datasheet

TARIC:
8541210000
USHTS:
8541210075
ECCN:
EAR99

MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (VCE) of 160V and a collector current (IC) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.

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