Results: 7
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies IGBT Modules 1700 V, 600 A dual IGBT module
Datasheet
24In Stock
8Expected 4/16/2026
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 600 A 100 nA 106.4 mm x 61.4 mm x 30.5 mm - 40 C + 175 C Tray
Infineon Technologies FF800R12KE7PEHPSA1
Infineon Technologies IGBT Modules 1200 V, 800 A dual IGBT module
Datasheet
32In Stock
Min.: 1
Mult.: 1

Tray
Infineon Technologies FF800R12KE7PHPSA1
Infineon Technologies IGBT Modules 1200 V, 800 A dual IGBT module
Datasheet
32In Stock
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module
Datasheet
32Expected 4/16/2026
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 450 A 100 nA 106.4 mm x 61.4 mm x 30.5 mm - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 450 A common emitter IGBT module
Datasheet
32Expected 4/3/2026
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 450 A 100 nA 106.4 mm x 61.4 mm x 30.5 mm - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module
Datasheet
32Expected 4/16/2026
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 600 A 100 nA 106.4 mm x 61.4 mm x 30.5 mm - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 62 mm C-Series module with TRENCHSTOPIGBT7 and emitter controlled 7 diode
Datasheet
30On Order
Min.: 1
Mult.: 1
IGBT Modules Half Bridge 1.2 kV 1.5 V 800 A 100 nA Module - 40 C + 175 C Tray