STY50N105DK5

STMicroelectronics
511-STY50N105DK5
STY50N105DK5

Mfr.:

Description:
MOSFETs N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa

ECAD Model:
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In Stock: 439

Stock:
439 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 439 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
23,53 € 23,53 €
15,19 € 151,90 €
15,04 € 1.504,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
Max247-3
N-Channel
1 Channel
1.05 kV
44 A
100 mOhms
- 30 V, 30 V
3 V
175 nC
- 55 C
+ 150 C
625 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Product Type: MOSFETs
Series: STY50N105DK5
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 5 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

MDmesh DK5 MOSFETs

STMicroelectronics MDmesh DK5 MOSFETs are very-high voltage fast recovery diodes with a 950V to 1050V breakdown voltage. The DK5 has a very low gate charge, as low as 45nC, and a reverse recovery time (trr) of 250ns (typ.). This makes the MDmesh DK5 ideal for ZVS LLC resonant converters in high-power applications. These applications include industrial welders, plasma generators, high-frequency induction melting/heating, and X-ray machines.