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IRF5801TRPBF

Name: Infineon IRF5801TRPBF
Brand: Infineon Technologies
SKU: 942-IRF5801TRPBF
Price: 0.59 EUR
Availability: InStock

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Mouser No:

942-IRF5801TRPBF

Mfr. No:

IRF5801TRPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFT 200V 0.6A 2200mOhm 3.9nC

Datasheet:

IRF5801TRPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IRF5801TRPBF

In Stock: 10.766

Stock:: 10.766 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,593 €	0,59 €
	0,369 €	3,69 €
	0,237 €	23,70 €
	0,181 €	90,50 €
	0,157 €	157,00 €
Full Reel (Order in multiples of 3000)
	0,134 €	402,00 €
	0,126 €	756,00 €
	0,113 €	1.017,00 €
	0,111 €	2.664,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSOP-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	600 mA
Rds On - Drain-Source Resistance:	2.2 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	3.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	19 ns
Forward Transconductance - Min:	0.44 S
Product Type:	MOSFETs
Rise Time:	8 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	8.8 ns
Typical Turn-On Delay Time:	6.5 ns
Unit Weight:	20 mg

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Filter Document:

Datasheet

IRF5801TRPBF Datasheet (PDF)

Application Notes

Models

Saber Model - IRF5801 (CAD)

Product Catalogs

SPICE Models

Spice Model - IRF5801

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.