RF MOSFET Transistors

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Qty. RoHS ECAD Model Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package/Case
Packaging
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet
3.564In Stock
Min.: 1
Mult.: 1

N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet
252In Stock
Min.: 1
Mult.: 1
No
N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube