VSLY5940

Vishay Semiconductors
78-VSLY5940
VSLY5940

Mfr.:

Description:
Infrared Emitters 940nm,T-1.75 600mW/sr,+/-3deg.

ECAD Model:
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In Stock: 11.763

Stock:
11.763 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,26 € 1,26 €
0,839 € 8,39 €
0,637 € 63,70 €
0,557 € 278,50 €
0,537 € 537,00 €
0,51 € 1.020,00 €
0,47 € 1.880,00 €
0,454 € 5.448,00 €
0,452 € 10.848,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
Through Hole
940 nm
600 mW/sr
3 deg
100 mA
1.65 V
55 mW
- 40 C
+ 85 C
Bulk
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Fall Time: 10 ns
Illumination Colour: Infrared
Lens Shape: Dome
Product Type: IR Emitters (IR LEDs)
Rise Time: 10 ns
Series: VSLY
Factory Pack Quantity: 4000
Subcategory: Infrared Data Communications
Tradename: SurfLight
Unit Weight: 493,769 mg
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Attributes selected: 0

TARIC:
8541410000
CNHTS:
8541410090
CAHTS:
8541410000
USHTS:
8541410000
JPHTS:
854141000
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.