STMicroelectronics Newest GaN FETs
Applied Filters:
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
12.04.2025
12.04.2025
E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
11.07.2025
11.07.2025
Built on GaN technology and designed for demanding power conversion applications.
STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor
10.28.2025
10.28.2025
E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.
Viewing: 1 - 3 of 3
Qorvo QPD1014A GaN Input Matched Transistors
01.20.2026
01.20.2026
15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.
Qorvo QPD1011A GaN Input Matched Transistors
01.19.2026
01.19.2026
7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.
Qorvo QPD1004A GaN Input Matched Transistors
01.19.2026
01.19.2026
25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
12.04.2025
12.04.2025
E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
11.07.2025
11.07.2025
Built on GaN technology and designed for demanding power conversion applications.
STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor
10.28.2025
10.28.2025
E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.
Guerrilla RF GRFx GaN HEMT Power Transistors
08.18.2025
08.18.2025
Unmatched discrete GaN-on-SiC HEMT power transistors designed for high-performance RF applications.
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07.03.2025
07.03.2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07.03.2025
07.03.2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
07.01.2025
07.01.2025
These FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
05.02.2025
05.02.2025
Designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching.
Nexperia GANB8R0-040CBA Bi-Directional GaN FET
04.14.2025
04.14.2025
40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.
Infineon Technologies CoolGaN™ G3 Transistors
04.10.2025
04.10.2025
designed to deliver superior performance in high-power density applications.
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTs
01.10.2025
01.10.2025
Designed for high-performance power conversion applications.
Infineon Technologies CoolGaN™ 650V G5 Transistors
12.20.2024
12.20.2024
Features highly efficient gallium nitride (GaN) transistor technology for power conversion.
MACOM GaN on SiC Transistors
11.26.2024
11.26.2024
Next-generation RF power transistors that deliver industry-leading gain, efficiency, and power.
Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors
11.12.2024
11.12.2024
Features highly efficient GaN transistor technology for power conversion up to 650V.
Nexperia GANB4R8-040CBA Bi-Directional GaN FET
10.01.2024
10.01.2024
A 40V, 4.8mΩ bi-directional GaN High Electron Mobility-Transistor (HEMT) in a WLCSP package.
Qorvo QPD1035 GaN RF Power Transistors
09.12.2024
09.12.2024
40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply.
Ampleon CLP24H4S30P GaN-SiC HEMT Power Transistor
07.23.2024
07.23.2024
Designed for continuous wave (CW) applications within the 2400MHz to 2500MHz frequency range.
Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET
07.02.2024
07.02.2024
A general purpose 150V, 3.9mΩ Gallium Nitride (GaN) FET in a VQFN package.
Infineon Technologies 700V CoolGaN™ G4 Power Transistors
05.27.2024
05.27.2024
Designed with low Rth(j-c) for high-power applications and highly efficient power switching.
Renesas Electronics TP65H050G4YS 650V SuperGaN® FET
03.15.2024
03.15.2024
50mΩ gallium nitride (GaN) normally-off device available in 4 Lead TO-247 package.
Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT
02.22.2024
02.22.2024
72mΩ RDS(on) in top-side-cooled, surface-mount TOLT package that meets the JEDEC-standard (MO-332).
Nexperia GAN039 CCPAK1212-Packaged Power GaN FETs
12.20.2023
12.20.2023
Copper-clip package technology with low inductances/switching losses and high reliability.
Viewing: 1 - 25 of 30
