Newest Discrete Semiconductors
Types of Discrete Semiconductors
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IXYS X4-Class Power MOSFETs
02.02.2026
02.02.2026
Offer low on-state resistance and conduction losses, with improved efficiency.
IXYS DP High-Voltage, Fast-Recovery Diodes
01.20.2026
01.20.2026
600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.
IXYS MMIX1T500N20X4 200 V X4-Class Power MOSFET
10.08.2025
10.08.2025
Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs
09.19.2025
09.19.2025
These devices have a high blocking voltage with low on-state resistance [RDS(ON)].
IXYS IXSJxN120R1K 1200V SiC Power MOSFETs
08.27.2025
08.27.2025
Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).
IXYS Dx Series Automotive Silicon Rectifiers
04.14.2025
04.14.2025
Features glass-passivated junctions, ensuring stable operation and high reliability.
IXYS DCK SiC Schottky Diodes
04.03.2025
04.03.2025
Features high-frequency operation and high surge current capability.
IXYS MCMA140PD1800TB Thyristor-Diode Module
03.25.2025
03.25.2025
140A diode module, integrated with a planar passivated chip and offers long-term stability.
IXYS IXFP34N65X2W Power MOSFET
03.17.2025
03.17.2025
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS IXSA40N120L2-7 SiC MOSFET
03.06.2025
03.06.2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
IXYS IXSA80N120L2-7 SiC MOSFET
03.06.2025
03.06.2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS IXFH34N65X2W Power MOSFET
02.27.2025
02.27.2025
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS IXFH46N65X2W Power MOSFET
02.27.2025
02.27.2025
650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS IXSH80N120L2KHV SiC MOSFET
02.18.2025
02.18.2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXSH40N120L2KHV SiC MOSFET
02.18.2025
02.18.2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXTNx00N20X4 miniBLOC MOSFETs
11.28.2024
11.28.2024
Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.
IXYS DPF100C1200HB 1200V, 2x 50A Fast Recovery Diodes
11.22.2024
11.22.2024
Two general-purpose power switching diodes in a common-cathode configuration and a TO-247 package.
IXYS Gen5 XPT IGBTs
07.25.2024
07.25.2024
Offers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.
IXYS DPF30U200FC 200V 30A 3-Phase Bridge Rectifier
07.22.2024
07.22.2024
This device is commonly used as a rectifier in Switch Mode Power Supplies (SMPS).
IXYS DSEP60-06AZ 600V 60A Fast Recovery Diode
07.08.2024
07.08.2024
A high-performance, low-loss, soft-recovery single diode in a TO-268AA (D3PAK-HV) package.
IXYS SRU6008DS2RP Sensitive SCR
02.19.2024
02.19.2024
A 600V high forward blocking SCR, ideal for high voltage capacitor discharge applications.
IXYS MCMA140P1600TA-NI Thyristor Modules
01.18.2024
01.18.2024
Features planar passivated chips and direct copper-bonded AI2O3-ceramic for line frequency.
IXYS MPA 95-06DA FRED Modules
01.18.2024
01.18.2024
Features planar passivated chips and low switching loss for high-frequency switching devices.
IXYS DMA80I1600HA Single-Diode Rectifiers
08.11.2022
08.11.2022
Features planar passivated chips, low leakage current, and low forward voltage drop.
IXYS STS802U2SRP 1.5A Sensitive Dual SCRs
08.10.2022
08.10.2022
Offers a high static dv/dt with a low turn-off (tq) time and up to 20A surge capability.
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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04.14.2026
04.14.2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04.10.2026
04.10.2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
Vishay S07x-M Standard Recovery High Voltage Rectifiers
04.07.2026
04.07.2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04.07.2026
04.07.2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Vishay RS07x Fast Recovery Rectifiers
04.07.2026
04.07.2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.
onsemi NTMFD0D9N02P1E MOSFET
04.06.2026
04.06.2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04.02.2026
04.02.2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Vishay VS-HOT200C080 200A 80V Power MOSFET Module
04.02.2026
04.02.2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04.02.2026
04.02.2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Toshiba N-Channel/P-Channel Power MOSFETs
03.31.2026
03.31.2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03.31.2026
03.31.2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03.27.2026
03.27.2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
Infineon Technologies Multi-Purpose Diodes for ESD Protection
03.27.2026
03.27.2026
Offering the best protection in a small footprint, the diodes deliver superior ESD performance.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03.27.2026
03.27.2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03.24.2026
03.24.2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
RECOM Power RVS002 Micropower Isolated Power Bridge Rectifier
03.24.2026
03.24.2026
Designed for micro-power isolated power supply applications in space-constrained environments.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03.20.2026
03.20.2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Vishay T3KN12CA thru T3KN100CA PAR® TVS
03.18.2026
03.18.2026
TVSs are bidirectional, 3000W peak-pulse-power devices ideal for automated placement.
Vishay XFD11K XClampR® Transient Voltage Suppressors
03.18.2026
03.18.2026
Surface-mount bidirectional devices designed for high-temperature stability and high reliability.
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03.17.2026
03.17.2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03.17.2026
03.17.2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches
03.17.2026
03.17.2026
These devices are a great fit for serving as battery disconnect switches in various applications.
Diodes Incorporated DTHP60B07PT 60A Hyper-Fast Planar Rectifiers
03.13.2026
03.13.2026
Features a 650V reverse voltage, low forward voltage drop, and ultra-fast reverse recovery time.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03.13.2026
03.13.2026
Designed for compact and efficient designs, including high thermal performance.
Micro Commercial Components (MCC) BAT46L2 Schottky Diode
03.12.2026
03.12.2026
150mW small-signal Schottky diode designed for high‑speed switching applications.
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