Newest Transistors – Mouser Bulgaria

.hide-partial { max-height: none; } .show-more { display: none; }

.catnav-wrapper { height: auto; overflow: visible; } .catalog-nav-tabs ul { white-space: normal; }

Types of Transistors

List Images

Applied Filters:

Manufacturer = Nexperia Return to the Products tab to modify your current filters.

Nexperia BUK7Q N-Channel MOSFET in MLPAK33-WF Package

09.29.2025

- Uses Trench 9 technology, meets AEC-Q101 requirements.

Nexperia BUK9Q N-Channel Trench MOSFET

09.09.2025

- Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.

Nexperia BUK6Q8R2-30PJ MOSFET

08.27.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q66-60PJ MOSFET

08.27.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia MJPEx Bipolar Junction Transistors (BJTs)

08.26.2025

- CFP15B package offers a compact & cost-efficient alternative to the MJD series in the DPAK package.

Nexperia BUK6Q12-40PJ MOSFET

08.19.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q21-30PJ MOSFET

08.19.2025

- 30V, P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q26-40PJ MOSFET

08.19.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

07.03.2025

- 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs

07.03.2025

- Normally off e-mode devices that deliver superior performance and very low on-state resistance.

Nexperia GANB8R0-040CBA Bi-Directional GaN FET

04.14.2025

- 40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.

Nexperia PXNx N-Channel Logic Level Trench MOSFETs

04.14.2025

- 60V and 100V MOSFETS designed for high-efficiency power management in various applications.

Nexperia NX5020x N-Channel Enhancement Mode FETs

04.01.2025

- Devices have a very low threshold voltage and very fast switching using Trench MOSFET technology.

Nexperia Application-Specific Power MOSFETs

01.21.2025

- Combines proven MOSFET expertise with broad application understanding to create an expanding range.

Nexperia CCPAK ASFETs for Hotswap & Soft Start

01.08.2025

- Offers a reliable linear mode, enhanced SOA, and low RDS(on) in a single device.

Nexperia BC5xPAS-Q 1A Medium Power PNP Transistors

12.30.2024

- AEC-Q101 qualified PNP transistors in an ultra-thin DFN2020D-3 (SOT1061D) SMD plastic package.

Nexperia BC869-Q Power Transistors

12.11.2024

- PNP medium power transistors in a SOT89 (SC-62) medium power and flat lead plastic package.

Nexperia GANB4R8-040CBA Bi-Directional GaN FET

10.01.2024

- A 40V, 4.8mΩ bi-directional GaN High Electron Mobility-Transistor (HEMT) in a WLCSP package.

Nexperia BUK7J2R4-80M N-channel MOSFET

08.30.2024

- Based on the Trench 14 low ohmic split-gate technology and housed in an LFPAK56E package.

Nexperia PBSSxx50PAS/PBSSxx50PAS-Q Transistors

07.04.2024

- Provides low collector-emitter saturation voltage and high collector current capability.

Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET

07.02.2024

- A general purpose 150V, 3.9mΩ Gallium Nitride (GaN) FET in a VQFN package.

Nexperia NSF0x0120 N-Channel SiC MOSFETs

07.01.2024

- Offers superior RDS(on) temperature stability in a standard 7-pin TO-263 plastic package.

Nexperia PSMNxRx-80YSF NextPower N-Channel MOSFETs

06.24.2024

- 80V, standard-level gate drive MOSFETs with a low Qrr for higher efficiency and lower spiking.

Nexperia NSF0x120L4A0 N-Channel MOSFETs

04.23.2024

- Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages.

Nexperia 2N7002AK N-Channel Trench MOSFETs

04.04.2024

- Small AEC-Q101-qualified SMD plastic packages using Trench MOSFET technology.

Viewing: 1 - 25 of 54

Filter By:

ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules

03.17.2026

- Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

03.13.2026

- Designed for compact and efficient designs, including high thermal performance.

Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.

Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.

Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.

Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.

Qorvo QPD2560L 300W GaN/SiC HEMT

03.09.2026

- Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.

Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

03.06.2026

- Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.

EPC EPC2305 Enhancement-Mode GaN Power Transistor

03.05.2026

- Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.

EPC EPC2304 Enhancement-Mode GaN Power Transistor

03.05.2026

- Handles tasks where ultra-high switching frequency and low on-time are advantageous.

Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs

03.05.2026

- 80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.

EPC EPC2302 Enhancement-Mode GaN Power Transistor

03.05.2026

- Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.

Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches

02.26.2026

- Switches are designed to block voltage in both directions, with unique substrate-clamp technology.

Navitas Semiconductor NV60x GaNFast™ Power FETs

02.26.2026

- Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.

Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches

02.26.2026

- Designed to block voltage in both directions using unique substrate clamp technology.

iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs

02.19.2026

- Features low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.

TDK-Lambda i1R ORing MOSFET Modules

02.05.2026

- High-efficiency and low-loss power devices designed to replace traditional diodes.

IXYS X4-Class Power MOSFETs

02.02.2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

Qorvo QPD1014A GaN Input Matched Transistors

01.20.2026

- 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Qorvo QPD1004A GaN Input Matched Transistors

01.19.2026

- 25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

Qorvo QPD1011A GaN Input Matched Transistors

01.19.2026

- 7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12.26.2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs

12.23.2025

- Sets industry benchmark performance with a wide portfolio offering.

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs

12.19.2025

- Engineered to meet the stringent demands of electric vehicle (EV) applications.

onsemi NVMFD5877NL Dual N-Channel MOSFET

12.19.2025

- Designed for compact and efficient designs including high thermal performance.

Viewing: 1 - 25 of 646

Types of Transistors

Filter By:

Customer Service Office

Company

Resources

Support