Types of Discrete Semiconductors
Toshiba TPH2R70AR5 N-Ch MOSFET
10.17.2025
10.17.2025
Ideal for high-efficiency DC-DC converters and is available in a SOP Advance (N) package.
Toshiba XCEZ Automotive Zener Diodes
08.29.2025
08.29.2025
Feature 150mW and 300mW power dissipation and are AEC-Q101 qualified.
Toshiba TRSx SiC Schottky Barrier Diodes
04.04.2025
04.04.2025
These SiC Schottky barrier diodes have a repetitive peak reverse voltage (VRRM) rating of 1200V.
Toshiba L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs
10.14.2024
10.14.2024
Housed in L-TOGL™ package to meet the growing demand for 48V batteries in automotive equipment.
Toshiba TKx Silicon N-Channel MOSFETs
09.13.2024
09.13.2024
Available in U-MOSX-H and DTMOSVI types and offers exceptional performance characteristics.
Toshiba TPH1400CQ5 Silicon N-Channel MOSFETs
09.10.2024
09.10.2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs
08.12.2024
08.12.2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba UMOS9-H Silicon N-channel MOSFETs
05.13.2024
05.13.2024
Ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers.
Toshiba XCUZ Zener Diodes
01.23.2024
01.23.2024
Designed for automotive usage, features 600mW power dissipation and AEC-Q101 qualified.
Toshiba TRSx65H SiC Schottky Barrier Diodes
07.26.2023
07.26.2023
650V devices based on third-generation technology utilizing Schottky metal.
Toshiba SSM14N956L MOSFET
06.09.2023
06.09.2023
Features low source-source on-resistance and is RoHS compatible.
Toshiba XPQR3004PB 40V 400A Automotive MOSFET
02.13.2023
02.13.2023
Offers RDS(ON) of 0.23mΩ (typical) and threshold voltage (Vth) of 2V to 3V, capable of 400A.
Toshiba 3rd Generation Silicon Carbide MOSFETs
07.11.2022
07.11.2022
SiC Technology for high-efficiency, high-speed designs.
Toshiba TPH9R00CQH Silicon N-Channel MOSFET
03.23.2022
03.23.2022
Offers high-speed switching with a small output and gate charge in an SOP-8 package.
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ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03.17.2026
03.17.2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03.13.2026
03.13.2026
Designed for compact and efficient designs, including high thermal performance.
Diodes Incorporated DTHP60B07PT 60A Hyper-Fast Planar Rectifiers
03.13.2026
03.13.2026
Features a 650V reverse voltage, low forward voltage drop, and ultra-fast reverse recovery time.
Micro Commercial Components (MCC) BAT46L2 Schottky Diode
03.12.2026
03.12.2026
150mW small-signal Schottky diode designed for high‑speed switching applications.
Texas Instruments TVS2210 Flat-Clamp Surge Protection Device
03.12.2026
03.12.2026
Designed to robustly shunt up to 25A of fault current to protect from transients or lightning.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Littelfuse SP1120-01WTG Unidirectional Discrete TVS Diode
03.09.2026
03.09.2026
Proprietary silicon avalanche technology and offers high ESD protection for electronic equipment.
Qorvo QPD2560L 300W GaN/SiC HEMT
03.09.2026
03.09.2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor MMS3Z18BGW-AQ Zener Diode
03.06.2026
03.06.2026
Housed in a compact SOD‑323 surface‑mount package, providing a 300mW power dissipation.
Diotec Semiconductor MM3Z3V0-AQ Zener Diode
03.06.2026
03.06.2026
Offers a 300mW power dissipation rating and comes in a compact SOD‑323F surface‑mount package.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03.06.2026
03.06.2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
Diotec Semiconductor BZX84B20-AQ Zener Diode
03.06.2026
03.06.2026
Features 20V nominal Zener voltage, 0.050µA leakage current, and 55Ω dynamic resistance.
Diotec Semiconductor BZX84B4V3-AQ Zener Diode
03.06.2026
03.06.2026
Features 4.3V nominal Zener voltage with ±2% tolerance and 3μA leakage current at 1V.
Diotec Semiconductor SIT04C065 SiC Schottky Diode
03.06.2026
03.06.2026
Supports a 650V repetitive peak reverse voltage and delivers a 4A average forward rectified current.
Diotec Semiconductor MM5Z6V8B-AQ Zener Diode
03.06.2026
03.06.2026
Housed in an ultra‑small SOD‑523 surface‑mount package and AEC‑Q101 qualified.
Diotec Semiconductor TPSMA6L20A-AQ TVS Diode
03.06.2026
03.06.2026
AEC‑Q101 qualified unidirectional diode built in compact SMAF (DO‑221AC) low‑profile package.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
Littelfuse Sx4340L TVS Diode Arrays
03.05.2026
03.05.2026
Offers 0.55pF ultra-low capacitance in a space-saving SOD882 package.
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs
03.05.2026
03.05.2026
80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
Diotec Semiconductor BAT54WT Schottky Diode
03.03.2026
03.03.2026
Designed for high-speed switching, low junction capacitance, and low leakage current.
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