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IS66WVH8M8BLL-100B1LI

Name: ISSI IS66WVH8M8BLL-100B1LI
Brand: ISSI
SKU: 870-WVH8M8BLL100B1LI
Price: 4.58 EUR
Availability: InStock

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Mouser No:

870-WVH8M8BLL100B1LI

Mfr. No:

IS66WVH8M8BLL-100B1LI

Mfr.:

ISSI

Description:

DRAM 64Mb 8Mbx8 3.0V 100MHz HyperRAM

Datasheet:

IS66WVH8M8BLL-100B1LI Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ISSI IS66WVH8M8BLL-100B1LI

In Stock: 781

Stock:: 781

Can Dispatch Immediately

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On Order:: 480

Expected 4/17/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1 Maximum: 423

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,58 €	4,58 €
	4,21 €	42,10 €
	4,09 €	102,25 €
	3,99 €	199,50 €
	3,90 €	390,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	HyperRAM
Memory Size:	64 Mbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	100 MHz
Package/Case:	TFGBA-24
Organisation:	8 M x 8
Access Time:	40 ns
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	IS66WVH8M8BLL
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage
Supply Current - Max:	35 mA
Tradename:	HyperRAM
Unit Weight:	84 mg

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Datasheet

IS66WVH8M8BLL-100B1LI Datasheet (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320002
JPHTS:: 854232029
KRHTS:: 8542321020
MXHTS:: 8542320299
ECCN:: EAR99

HYPERRAM™ Self-refresh DRAM

ISSI HYPERRAM™ Self-Refresh DRAMs are high-speed CMOS with a HYPERBUS™ interface. The HYPERBUS is a low signal count, Double Data Rate (DDR) interface that allows high-speed read and write throughput. These devices are available in KGD/KTD and 24-pin BGA packages with 32Mb, 64Mb, 128Mb, and 256Mb densities. Other features include hidden refresh operation and low power consumption. These memory devices are ideal for mobile and automotive applications.